The Ministry of Defense reported in its latest annual report for 2025–26 on the successful demonstration and implementation of domestic monolithic microwave integrated circuit technology based on gallium nitride (GaN MMIC) from the Defence Research and Development Organization (DRDO).
This technology is intended for high-frequency defense systems capable of supporting next-generation radar and electronic warfare systems.
According to the ministry's report, one domestic GaN-based chip measuring 3.5 x 3 mm is capable of outputting up to 30 watts of power and operating at a speed 300 times faster than silicon. The domestic GaN MMIC technology has been successfully demonstrated and implemented for use up to the X-band.