Russian scientists have developed a method for growing predominantly vertical gallium nitride nanorods using a porous silicon substrate. When standard silicon is used, these nanorods typically form at an angle to the surface; however, thanks to the specific geometry of the pores, it was possible to ensure their growth strictly perpendicular to the substrate.
According to information provided by the press service of Saint Petersburg State University, the obtained nanorods demonstrate high structural quality. In particular, their photoluminescence was more than three times more intense than expected.
The results of this scientific work were officially published in the peer-reviewed journal Materials Science in Semiconductor Processing.