Samsung Electronics announced a new line of memory technologies aimed at artificial intelligence systems on Tuesday (04) during the Future of Memory and Storage conference. The event was held in Santa Clara, California.
The South Korean company showcased the V10 Bonding V-NAND prototype, also known as BV-NAND. This solution was developed to increase storage capacity and enhance the performance of AI applications that require large volumes of data.
The new architecture presented by the manufacturer integrates over 400 layers and uses a wafer interconnection technology that allows for increased memory density, reduced thermal constraints, and optimized power consumption.
With the growing evolution of artificial intelligence systems, particularly those focused on generating user responses, the need for high-capacity memories has significantly increased. In this context, Samsung seeks to consolidate its position in the semiconductor market through the development of specific solutions for heavier workloads.
According to the company itself, the BV-NAND technology represents a progress compared to the previous generation, V9 NAND, showing an approximate 58% increase in memory density. Furthermore, improvements were reported in read, write, and data input/output operations, aspects crucial for applications that rely on ultra-fast storage.
In addition to the new prototype, Samsung demonstrated concepts of architectures named zHBM and zNAND-O, which are part of the corporate strategy for developing three-dimensional memories. This proposal involves the vertical stacking of memory cells to concentrate more information in a smaller space.
The manufacturer explained that the zHBM technology differs from conventional high-bandwidth memories by positioning memory components vertically above artificial intelligence accelerators. This results in a reduction of the data path and an increase in energy efficiency.
Samsung also stated that its wafer bonding technique could enable a memory density more than ten times that achieved by traditional HBM5-based solutions. The company added that this methodology has the potential to triple energy efficiency and reduce thermal resistance by more than half.
This announcement comes amid discussions about the future of memory chip demand. While some investors express concern about the possible effects of a decline in smartphone consumption in China, industry analysts indicate that the advancement of artificial intelligence sustains demand at high levels.
The company recently revealed that long-term contracts with customers can account for between 60% and 70% of its future memory sales. Citi reports also point out that DRAM and NAND supply chain inventories remain below historical averages, even amidst uncertainties in other market segments.
